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cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 1/11 MTN2N60J3 cystek product specification n-channel enhancement mode power mosfet MTN2N60J3 description the MTN2N60J3 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the to-252 package is universally preferred for all commercial-industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package applications ? open framed power supply ? adapter ? stb ordering information device package shipping MTN2N60J3 -0-t3-g to-252 (pb-lfree lead plating and halogen-free package) 2500 pcs / tape & reel bv dss : 600v r ds(on) : 4.0 (typ.) i d : 2a environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 2/11 MTN2N60J3 cystek product specification symbol outline MTN2N60J3 to-252(dpak) absolute maximum ratings (t c =25 c) parameter symbol limits unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current @ v gs =10v, t c =25 c i d 2 a continuous drain current @ v gs =10v, t c =100 c i d 1.2 a pulsed drain current @ v gs =10v (note 1) i dm 8 a single pulse avalanche energy (note 2) e as 63 mj avalanche current (note 1) i ar 1.9 a repetitive avalanche energy (note 1) e ar 4.4 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns maximum temperature for solder ing @ lead at 0.125 in(0.318mm) from case for 10 seconds t l 300 c total power dissipation (t a =25 ) 1.14 w w total power dissipation (t c =25 ) linear derating factor p d 44 0.35 w/ c operating junction and storage temperature tj, tstg -55~+150 c note : 1 . repetitive rating; pulse width limited by maximum junction temperature. 2 . i as =2a, v dd =50v, l=30mh, r g =25 , starting t j =+25 . 3 . i sd 2a, di/dt 100a/ s, v dd bv dss , starting t j =+25 . thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 2.87 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 (note) c/w thermal resistance, junction-to-ambient, max r th,j-a 110 c/w note : when mounted on the minimu m pad size recommended (pcb mount). g d s g gate d drain ssource
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 3/11 MTN2N60J3 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 600 - - v v gs =0, i d =250 a, tj=25 ? bv dss / ? tj - 0.6 - v/ c reference to 25c, i d =250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d =250 a *g fs - 1.7 - s v ds =15v, i d =1a i gss - - 100 na v gs = 30 - - 1 a v ds =600v, v gs =0 i dss - - 10 a v ds =480v, v gs =0, t c =125 c *r ds(on) - 4 4.7 v gs =10v, i d =1a dynamic *qg - 8.5 - *qgs - 1.3 - *qgd - 4.1 - nc i d =2a, v dd =480v, v gs =10v *t d(on) - 9 - *tr - 25 - *t d(off) - 24 - *t f - 28 - ns v dd =300v, i d =2a, v gs =10v, r g =25 , r d =150 ciss - 340 - coss - 35 - crss - 5.2 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *v sd - - 1.4 v i s =2a, v gs =0v *i s - - 2 *i sm - - 8 a *trr - 230 - ns *qrr - 1 - c v gs =0, i f =2a, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 4/11 MTN2N60J3 cystek product specification typical characteristics typical output characteristics 0 1 2 3 4 5 0 102030405060 drain-source voltage -v ds (v) drain current - i d (a) v gs =4.5v 15v 10v 9v 7v 6v 5v 5.5v static drain-source on-resistance vs ambient temperature 0 1 2 3 4 5 6 7 8 9 10 -100 -50 0 50 100 150 ambient temperature-ta(c) static drain-source on-state resistance-r ds(on) () i d =1a, v gs =10v static drain-source on-state resistance vs drain current 3 4 5 6 7 8 0.1 1 10 drain current-i d (a) static drain-source on-state resistance-r ds(on) () v gs =10v drain current vs gate-source voltage 0 1 2 3 4 0510152 gate-source voltage-vgs(v) drain current-i d(on) (a) 0 ta=25c v ds =10v v ds =30v static drain-source on-state resistance vs gate-source voltage 3 4 5 6 7 8 4 6 8 10 12 gate-source voltage-v gs (v) static drain-source on-state resistance-r ds(on) () ta=25c i d =1a body diode forward voltage variation vs source current and temperature 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 source drain voltage -v sd (v) reverse drain current-i dr (a) v gs =0v ta=25c ta=150c
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 5/11 MTN2N60J3 cystek product specification typical characteristics(cont.) capacitance vs reverse voltage 1 10 100 1000 0 5 10 15 20 25 30 drain-to-source voltage-v ds (v) capacitance-(pf) ciss coss crss f=1mhz brekdown voltage vs ambient temperature 600 650 700 750 -100 -50 0 50 100 150 200 ambient temperature-tj(c) drain-source breakdown voltage bv dss (v) i d =250a, v gs =0v maximum safe operating area 0.01 0.1 1 10 1 10 100 1000 drain-source voltage -v ds (v) drain current --- i d (a) operation in this area is limited by rds(on) dc 10ms 100ms 1ms 100 s 10 s single pulse tc=25c; tj=150c gate charge characteristics 0 2 4 6 8 10 12 0246810 total gate charge---qg(nc) gate-source voltage---v gs (v) i d =2a v ds =120v v ds =300v v ds =480v maximum drain current vs case temperature 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 case temperature---t c (c) maximum drain current---i d (a)
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 6/11 MTN2N60J3 cystek product specification typical characteristics(cont.) transient thermal response curves 0.01 0.1 1 10 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.z jc (t)=2.87c/w max. 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t) recommended soldering footprint
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 7/11 MTN2N60J3 cystek product specification test circuits and waveforms
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 8/11 MTN2N60J3 cystek product specification test circuits and waveforms(cont.)
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 9/11 MTN2N60J3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 10/11 MTN2N60J3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c435j3 issued date : 2009.01.20 revised date :2013.12.26 page no. : 11/11 MTN2N60J3 cystek product specification to-252 dimension inches millimeters inches millimeters dim min. max. min. max. marking: style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-252 plastic surface mount package cystek package code: j3 device name date code cys 2n60 1 2 3 4 dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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